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| Product Specification www.jmnic.com 2SD1026 Silicon NPN Transistors Features (c)q (c)q With TO-247 package Darlington transistor BCE Absolute Maximum Ratings Tc=25ae SYMBOL VCBO VCEO VEBO IB IC PC Tj Tstg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature RATING 100 100 7 1 15 100 150 -55~150 ae ae UNIT V V V A A W TO-247 Electrical Characteristics Tc=25ae SYMBOL ICBO ICEO IEBO VCBO VCEO VEBO VCE(sat-1) VCE(sat-2) hFE-1 hFE-2 VBE(sat-1) VBE(sat-2) fT PARAMETER Collector cut-off current Collector breakdown voltage Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltages Collector-emitter saturation voltages Forward current transfer ratio Forward current transfer ratio Base-emitter saturation voltages Base-emitter saturation voltages Transition frepuency at f=1MHz IC=1.5A; VCE=10V 20 MHz IC=10A; IB=20mA 2.0 V IC=10A; VCE=3V 1500 30000 IC=10A; IB=20mA 1.5 V IC=30mA; IB=0 100 V CONDITIONS VCB=100V; IE=0 VCE=100V; IB=0 VEB=7V; IC=0 MIN TYP MAX 0.1 0.1 5 UNIT mA mA mA JMnic |
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